Development a new generation of semiconductor illumination source
V.N. Gridin, S.N. Zaytsev, I.V. Ryzhikov, N.V. Sherbakov

Full text of article: Russian language.

Abstract:
Developed a patent-pure technology, and the design of a new generation of efficient, powerful, cost-effective, reliable, radiation-resistant, ecologically clean semiconductor sources of light for illumination of streets, squares, facades of buildings and other objects. Basic elements of a design are not discrete light-emitting diodes, and the light-emitting diode modules containing more of five heterostructures. Are chosen optimum on structure and the sizes of heterostructure on the copper basis and alumoittriev the offered luminofores activated by cerium and prazeodium which have allowed to receive sources with colour temperature 2850-7000 K. Mathematical model allowes to deduce a lumen-amper characteristics. Priority researches of influence of a penetrating radiation on light-emitting diode modules with blue and white colour of a luminescence have allowed to establish exclusively high radiating firmness as heterostructures, and phosphors and use the modules civil and special eguipment.

Key words:
a light-emitting diode, the light-emitting diode module, heterostructure, alumoittrien a phosphor, colour temperature, a semi-conductor source of illumination.

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