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Modeling the generation of optical modes in a semiconductor waveguide with distributed feedback formed by a space charge wave

Yu.S. Dadoenkova 1,2, I.O. Zolotovsky 1, I.S. Panyaev 1, D.G. Sannikov  1

Ulyanovsk State University (USU), 432970, Ulyanovsk, Russia, L.Tolstoy street, 42,

Lab-STICC (UMR 6285), CNRS, ENIB, 29238, France, Brest Cedex 3

 PDF, 1315 kB

DOI: 10.18287/2412-6179-CO-587

Pages: 183-188.

Full text of article: Russian language.

Abstract:
The amplification and generation of optical TE waves arising on a lattice formed by a space charge wave in a planar waveguide based on a donor-doped semiconductor (gallium arsenide) n-GaAs are considered. The region of interaction is limited by contacts with a constant electric field applied between them, which, while operating in the Gunn oscillations suppression mode, gener-ates a small-signal periodic inhomogeneity. Reflection and transmission regimes for same-index TE modes propagating in the waveguide structure are investigated depending on the phase mis-match and the pump level. It is shown that even with a relatively small modulation depth of the di-electric constant (about 10–5), under conditions of high optical pumping (with a gain of about 150 cm–1) and a corresponding detuning from phase matching there is the possibility of not only ampli-fying the direct and backward (reflected) optical modes, but also their generation. The advantage of the considered effects is that they enable flexible control of parameters of the dynamic lattice. The results obtained can be used to create semiconductor laser generators based on the interaction of the optical modes and a space charge wave.

Keywords:
space charge wave, light generation, semiconductor.

Citation:
Dadoenkova YuS, Zolotovsky IO, Panyaev IS, Sannikov DG. Modeling the generation of optical modes in a semiconductor waveguide with distributed feedback formed by a space charge wave. Computer Optics 2020; 44(2): 183-188. DOI: 10.18287/2412-6179-CO-587.

Acknowledgements:
The work was supported by the RF Ministry of Science and Higher Education (projects No. 3.8154.2017/BP (I.S.P. and D.G.S.), No. 14.Z50.31.0015, Government Contract No. 3.7614.2017 / P220 (Yu.S.D.), by RFBR, project number 19-42-730005 (I.S.P., I.O.Z., D.G.S), by the Regional Council of Brittany, France (Project SPEACS) (Yu.S.D.).

References:

  1. Levinstein ME, Pozhela YuK, Schur MS. Gunn's effect [In Russian]. Moscow, "Sovetskoe Radio" Publisher; 1975.
  2. Barybin AA. Waves in thin-film semiconductor structures with hot electrons [In Russian]. Moscow: "Nauka" Publisher; 1986.
  3. Schur MS. Modern devices on the basis of gallium arsenide [In Russian]. Moscow: "Mir" Publisher; 1991.
  4. Barybin AA, Vendik IB, Vendik OG, Kalinikos BA, Mironenko IG, Ter-Martirosyan LG. Perspectives of the microwave integral electronics [In Russian]. Microelectronics 1979; 8: 3-19.
  5. Proklov VV, Shkerdin GN, Gulyaev YV. The diffraction of electromagnetic waves by sound in conducting crystals. Solid State Commun 1972; 10: 1145-1150.
  6. Proklov VV, Mirgorodsky VI, Shkerdin GN, Gulyaev YV. Observation of light diffraction on electronic waves in piezosemiconductors. JETP Lett 1974; 19: 7-8. DOI: 10.1016/0038-1098(74)90074-X.
  7. Ridley BK, Watkins TB. The possibility of negative resistance effects in semiconductors. Proc Phys Soc 1961; 78: 293-304. DOI: 10.1088/0370-1328/78/2/315.
  8. Bryksin VV, Kleinert P, Petrov MP. Theory of space-charge waves in semiconductors with negative differential conductivity. Physics of the Solid State 2003; 45(11): 2044-2052.
  9. Chaika GE, Malnev VN, Panfilov MI. Diffraction of luminous radiation on waves of a space charge [In Russian]. Optika i Spectroscopiya 1996; 81: 481-483.
  10. Barybin AA, Mikhaǐlov AI. Parametric interaction of space-charge waves in thin-film semiconductor structures. Technical Physics. The Russian Journal of Applied Physics 2000; 70(2): 189-193.
  11. Sannikov DG, Sementsov DI. Bragg reflection of light on waves of a space charge in a semiconductor wave guide [In Russian]. Pisjma v GTF 2206; 32(6): 68-76.
  12. Sannikov DG, Sementsov DI. Waveguide interaction between light and an amplified space-charge wave. Physics of the Solid State 2007; 49(3): 488-492.
  13. Sementsov DI, Sannikov DG. Collinear interaction of waveguide optical modes with the amplifying wave of a space charge. Optics and Spectroscopy 2007; 102: 599-602.
  14. Sementsov DI, Sannikov DG. Transformation of waveguide modes by intensifying space-charge waves. Doklady Physics 2008; 53(9): 480-484.
  15. Sannikov DG, Sementsov DI. Collinear interaction of light with space-charge waves in a semiconductor waveguide. Journal of Communications Technology and Electronics 2006; 51(6): 677-684.
  16. Zhong Y, Dongmo PB, Gong L, Law S, Chase B, Wasserman D, Zide JMO. Degenerately doped InGaBiAs:Si as a highly conductive and transparent contact material in the infrared range. Opt Mater Express 2013; 3(8): 1197-1204. DOI: 10.1364/OME.3.001197.
  17. Davydova NS, Danyushevsky YuZ. Diode generators and very high frequency amplifiers [In Russian]. Moscow: "Radio i Svyaz" Publisher; 1986.
  18. Carroll JE. Hot electron microwave generators. American Elsevier Publishing Company; 1970.
  19. Yariv A. Quantum electronics. 3rd ed. New York: John Wiley & Sons; 1975.
  20. Adams MJ. An introduction to optical waveguides. New York: John Wiley & Sons; 1981.
  21. Hunsperger RG. Integrated optics: Theory and technology. 6th ed. New York: Springer Science+Business Media; 2009.
  22. Yariv A. Introduction to optical electronics. New York: Holt, Rinehart and Winston; 1976.
  23. Skauli T, Kuo PS, Vodopyanov KL, Pinguet TJ, Levi O, Eyres LA, Harris JS, Fejer MM, Gerard B, Becouarn L, Lallier E. Improved dispersion relations for GaAs and applications to nonlinear optics. J Appl Phys 2003; 94: 6447-6455. DOI: 10.1063/1.1621740.
  24. Adachi S. Optical dispersion relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1-xAs, and In1-xGaxAsyP1-y. J Appl Phys 1989; 66: 6030-6040. DOI: 10.1063/1.343580.
  25. Shur M. GaAs devices and circuits. New York: Plenum Press; 1987.
  26. Blakemore JS. Semiconducting and other major properties of gallium arsenide. J Appl Phys 1982; 53: R123-R181. DOI: 10.1063/1.331665.
  27. Nakamura M, Yen HW, Yariv A, Garmire E, Somekh S, Garvin HL. Laser oscillation in epitaxial GaAs waveguides with corrugation feedback. Appl Phys Lett 1973; 23: 224-225. DOI: 10.1063/1.1654867.
  28. Yu.S. Dadoyenkova, I.O. Zolotovsky, I.S. Panyaev, D.G. Sannikov, Differential generation of THz of radiation on the basis of parametrical three-wave interaction in crystals of CdTe and ZnTe. Optics and Spectroscopy 2018; 124: 712-719. DOI: 10.1134/S0030400X18050053.
  29. Zolotovskii IO, Korobko DA, Minvaliev RN, Ostatochnikov VA. A generator of far-infrared and terahertz radiation in nonlinear metamaterials exhibiting negative index of refraction. Optics and Spectroscopy 2014; 117(5): 822-831. DOI: 10.1134/S0030400X14110253.

 


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