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Calculation of the rate of plasma-chemical etching of quartz

A.V. Volkov, N.L. Kazanskiy, V.A. Kolpakov

Image Processing Systems Institute of RAS,

Samara Samara State Aerospace University

 PDF, 389 kB

Pages: 121-125

Full text of article: Russian language.

Abstract:
The development of new diffractive optical elements (DOEs) requires to create a DOE microrelief with a zone size of a few microns [1], which cannot be achieved without the modern materials and unique technological equipment. The work [2] presents the results of a study of binary focusators of high-power laser radiation, produced on quartz substrates, with a microrelief height of more than a micron and a minimum zone size of 13 μm. In this work, we propose a physicomathematical model of plasma-chemical etching, which allows to calculate the etching rate using the real parameters of the plasma-chemical etching modes.

Citation:
Volkov AV, Kazanskiy NL, Kolpakov VA. Calculation of the rate of plasma-chemical etching of quartz. Computer Optics 2001; 21: 121-125.

References:
  1. Volkov AV, Kazanskiy NL, Kostyuk GF, Kostyukevich SA, Shepelyavyi PE. Forming a DOE micro-relief with the use of chalcogenide vitreous semiconductors. Computer Optics 1999; 19: 129-131.
  2. Volkov AV, Doskolovich LL, Kazanskiy NL, Uspleniev GV, Zanelly A. Creation and study of binary focusing devices for a highpower ND-YAG laser. Computer Optics 2000; 20: 84-89.
  3. Bagrii IP, Chechko GA, Modeling of plasma etching for IC manufacture [In Russian]. Preprint of Glushkov Cybernetics Institute. Kiev: Ukr SSR Acad Sci Publisher; 1989; 89-46.
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