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The formation of DOE microrelief using the achievements in microelectronics

A.V. Volkov1,2, R.V. Skidanov1,2

1 IPSI RAS – Branch of the FSRC "Crystallography and Photonics" RAS,
443001, Samara, Russia, Molodogvardeyskaya 151,
2 Samara National Research University, 443086, Samara, Russia, Moskovskoye Shosse 34

 PDF, 1114 kB

Pages: 65-71.

Full text of article: Russian language.

Abstract:
The work analyzes the possibility of forming the microrelief of diffractive optical elements (DOE) by microelectronic technology. It also evaluates the maximum permissible deviations of the DOE microrelief parameters based on the technological errors that determine the minimum dimensions of passive elements in microelectronics. The paper presents the results of a numerical experiment on evaluation of the effect of technological errors in microrelief formation on the DOE parameters.

Keywords:
diffractive optical element, DOE, microelectronic technology, passive element.

Citation:
Volkov AV, Skidanov RV. The formation of DOE microrelief using the achievements in microelectronics. Computer Optics 2001; 22: 65 - 71.

References:
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