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Simulating the process of dielectric substrate surface cleaning in high-voltage gas discharge plasma

N.L. Kazanskiy1,2 V.A. Kolpakov1,2   S.V. Krichevsky1,2  
1Image Processing Systems Institute of RAS 

2Samara State Aerospace University named after academician S.P. Korolev 


 PDF, 640 kB

Pages: 80-86.

Abstract:
The mechanism of cleaning the surface of dielectric substrates in a low-temperature high-voltage gas discharge plasma was investigated theoretically and experimentally. It is shown that the main factors affecting the surface cleanliness are the exposure time, discharge current, accelerating voltage. A universal dependence was obtained that relates the amount of change in the concentration of contaminants on the surface with the rate of removal of contaminants and the duration of exposure. Good agreement between the experimental data and this dependence is shown. It was determined that the minimum surface concentration of contaminations is achieved when the duration of exposure is at least 10 seconds, the discharge current is at least 10 mA, the accelerating voltage is 2-3 kV. A real example of etching of silicon dioxide grooves in low-temperature high-voltage gas discharge plasma in a mixture of freon - 14 (CF4) and oxygen (O2) shows the effect of the substrate surface purity on the geometric parameters of the formed diffractive microrelief. According to the research results, a technique has been developed for cleaning the surface of dielectric substrates in high-voltage gas discharge plasma, characterized by low cost and energy consumption, which allows cleaning the surface to a level of 10-9 g/cm2.

Keywords:
high-voltage gas, discharge plasma, discharge current, accelerating voltage, plasma in a mixture of freon.

Citation:
Kazanskiy NL, Kolpakov VA, Krichevsky SV. Simulating the process of dielectric substrate surface cleaning in high-voltage gas discharge plasma. Computer Optics 2005; 28: 80-86.

References:
  1. Duval P. High-vacuum production in microelectronics industry. Amsterdam, New York: Elsevier; 1988. 
  2. Kolpakov AI, Kolpakov VA, Krichevsky SV. Ion-plasma cleaning of low-power relay contacts [In Russian]. Electronics Industry 1996; 5: 41-44. 
  3. Kolpakov VA. Modeling the high-voltage gas-discharge-plasma etching of SiO2. Russian Microelectronics 2002; 31(6): 366-374. 
  4. Kazanskiy NL, Kolpakov VA, Kolpakov AI. Anisotropic etching of SIO2 in high-voltage gas-discharge plasmas. Russian Microelectronics 2004; 33(3): 169-182. DOI: 10.1023/B:RUMI.0000026175.29416.eb. 
  5. Piganov MN, Kolpakov AI, Krichevsky SV. A device for rapid assessment of surface cleanliness of substrates by the tribometry method. Proceedings of the International Scientific and Technical Conference “Advance Technologies in Information Media” (Vladimir) 1995: 155-157. 
  6. Kolpakov VA, Kolpakov AI, Krichevsky SV. A device for the express-control of the surface finish of dielectric substrates [In Russian]. Pribory i Tekhnika Eksperimenta 1995; 5: 199-200. 
  7. Poltavtzev YG, Knyazev AS. Techniques of surface processing in microelectronics [In Russian]. Kiev: "Tekhnika" Publisher; 1990. 
  8. Ivanovsky GF, Petrov VI. Ion-plasma processing of materials [In Russian]. Moscow: "Radio i Svyaz" Publisher; 1986. 
  9. Brodie I, Muray JJ. The physics of microfabrication. New York, London: Plenum Press; 1982. 
  10. Anisimov YN, Galibey VI, Ivanchenko PA, Kirichenko IN, Oleschuk VI, Epimakhov YuK. Polymerization processes and physicochemical research methods [In Russian]. Kiev: "Vysshaya Shkola" Publisher; 1987. 
  11. Kireev VY, Nazarov DA, Kuznetsov VI. Ion-stimulated etching [In Russian]. Elektrnnaya Obrabotka Materialov 1986; 6: 40-43. 
  12. Kireev VY, Kremerov MA. Electron-stimulated etching [In Russian]. Electronic Engineering. Series 3. Microelectronics 1985; 151: 3-12.

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