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Optical, IR and THz screens based on layered metal-dielectric-semiconductor structures

M.V. Davidovich1,2,3, I.A. Kornev3

1 N.G. Chernyshevsky Saratov National Research State University, Saratov, Russia,  
2 V.A. Kotelnikov Saratov Branch of IRE RAS, Saratov, Russia,  
3 LLC Research Production Firm “ETNA PLUS”, Saratov, Russia

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DOI: 10.18287/2412-6179-2019-43-5-765-772

Pages: 765-772.

Full text of article: Russian language.

Abstract:
In this work, we consider multilayer coatings of metal-dielectric-semiconductor nanosized layers located on a transparent substrate and described on the basis of the Drude–Lorentz model that serve as multiband screen filters for different frequency ranges. Structures with several layers and quasi-periodic structures are investigated. A method of the approximate synthesis of band gap structures with two layers per period and three layers per period is proposed. For three layers, the difference in plasma frequencies allows one to extend the bands. It is shown that semiconductor layers made of narrow-band crystal materials like InSb are promising for THz-band structures with the ability to adjust the ranges by doping.

Keywords:
multi-layer coating, thermal screens, surface plasmons, reflection coefficient.

Citation:
Davidovich MV, Kornev IA. Optical, IR and THz screens based on layered metal-dielectric-semiconductor structures. Computer Optics 2019; 43(5): 765-772. DOI: 10.18287/2412-6179-2019-43-5-765-772.

Acknowledgements:
This work was financially supported by the Russian Science Foundation  under RSF grant No. 19-72-20202.

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