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Development of technology for creation of diffractive optical elements with submicron dimensions of the relief in the silicon wafer
A.V. Volkov, N.L. Kazanskiy, O.E. Rybakov
Image Processing Systems Institute of RAS

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Pages: 130-133

Full text of article: Russian language.

Abstract:
Etching is one of the critical stages of photolithography technology when it is used for the production of diffractive optical elements. The traditional etching method is liquid etching. This method is well-proven and has been used for a long time, but it has a number of limitations that cannot be circumvented [1]. For instance, undercut etching under the edge of the mask (etching wedge) limits the minimum size (area) and the height of the structural element. In case of liquid etching, it is difficult to ensure the observability and controllability of technological processes. Liquid etching has stringent requirements concerning the adhesion and durability of the photoresist or other masking material used in the etching process. Plasma or “dry” etching in many cases allows to circumvent these limitations, and provides new technological options that are not available in case of liquid etching of the relief .

Citation:
Volkov AV, Kazanskiy NL, Rybakov OE. Development of technology for creation of diffractive optical elements with submicron dimensions of the relief in the silicon wafer. Computer Optics 1998; 18: 130-133.

References:
  1. Moreau WM. Semiconductor lithography: Principles, practices, and materials. New York, London: Plenom Press; 1988.
  2. Soifer VA, Kazanskiy NL, Kharitonov SI. Synthesis of a binary DOE focusing into an arbitrary curve [In Russian]. Computer Optics 1996; 16: 22-27.
  3. Doskolovich LL, Petrova OI, Soifer VA, Kharitonov SI. Gradient method for the design of multiorder diffraction gratings using the Rayleigh method [In Russian]. Computer Optics 1996; 16: 31-35.
  4. Berlin AA, Kefeli TY, Korolev GV. Polyester acrylates [In Russian]. Moscow: "Nauka" Publisher; 1967 .

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