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Forming a DOE micro-relief with the use of chalcogenide vitreous semiconductors
A.V. Volkov, N.L. Kazanskiy, G.F. Kostyuk, S.A. Kostyukevich1, P.E. Shepelyavyi1
Image Processing Systems Institute of RAS
1Institute of Semiconductor Physics (ISP), NAS of Ukraine

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Pages: 129-131.

Full text of article: Russian language.

Abstract:
The diffractive optics specialists pay particular attention to the technologies of microrelief formation based on the microelectronics achievements and equipment [1]. This paper presents the results of microrelief formation using chalcogenide vitreous semiconductors with a resolution of over 5000 lines/mm.

Citation:
Volkov AV, Kazanskiy NL, Kostyuk GF, Kostyukevich SA, Shepelyavyi PE. Forming a DOE micro-relief with the use of chalcogenide vitreous semiconductors. Computer Optics 1999;
19: 129-131.

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